Product Overview and 2025 Market Relevance Wafer-level annealing and ion implantation equipment are core enablers of high-performance silicon carbide (SiC) device manufacturing. Ion implantation defines precise doping profiles for source/drain, body, and junction termination extension (JTE) regions, while high-temperature annealing activates implanted dopants, repairs lattice damage, and stabilizes interface properties for low on-resistance (RDS(on)) and … Continue reading Wafer-Level Annealing and Ion Implantation Equipment for SiC Device Activation and Junction Optimization