Wafer-Level Annealing and Ion Implantation Equipment for SiC Junction Activation and Doping Precision

Product Overview and 2025 Market Relevance Wafer-level annealing and ion implantation equipment are core enablers of high-performance silicon carbide (SiC) power devices, ensuring precise dopant placement and complete junction activation after implantation damage repair. For Pakistan’s industrial market—textile, cement, steel, and emerging sectors—reliable SiC devices underpin efficient 11–33 kV grid-tied photovoltaic inverters and high-duty industrial … Continue reading Wafer-Level Annealing and Ion Implantation Equipment for SiC Junction Activation and Doping Precision