- \n
- PFC verimlili\u011fini art\u0131rmak ve \u00f6n u\u00e7 do\u011frultmada termal y\u00fck\u00fc azaltmak.<\/li>\n\n\n\n
- \u0130nvert\u00f6r ve s\u00fcr\u00fcc\u00fc kademelerinin serbest \u00e7al\u0131\u015fma yollar\u0131nda diyot kaynakl\u0131 anahtarlama kay\u0131plar\u0131n\u0131 en aza indirmek.<\/li>\n\n\n\n
- Daha d\u00fc\u015f\u00fck ba\u011flant\u0131 s\u0131cakl\u0131klar\u0131 ve sa\u011flam 175\u00b0C \u00e7al\u0131\u015fma kabiliyeti sayesinde sistem g\u00fcvenilirli\u011fini art\u0131rmak.
SiC MOSFET'lerle ve optimize edilmi\u015f kap\u0131 s\u00fcr\u00fcc\u00fc stratejileriyle e\u015fle\u015ftirildi\u011finde, bu diziler 1,8\u20132,2\u00d7 g\u00fc\u00e7 yo\u011funlu\u011fu art\u0131\u015flar\u0131na olanak tan\u0131r ve Sind, Pencap ve Belucistan'daki end\u00fcstri parklar\u0131n\u0131n tipik tozlu, y\u00fcksek \u0131s\u0131 ortamlar\u0131nda 200.000 saate kadar MTBF hedeflerini destekler.<\/li>\n<\/ul>\n\n\n\n![\"\"](\"https:\/\/sicarbtech.com\/wp-content\/uploads\/2025\/09\/6-1.jpg\")
<\/figure>\n<\/div>\n\n\nTeknik \u00d6zellikler ve Geli\u015fmi\u015f \u00d6zellikler<\/h2>\n\n\n\n
- \n
- Elektriksel \u00f6zellikler<\/li>\n\n\n\n
- Gerilim s\u0131n\u0131flar\u0131: 650V, 1200V (end\u00fcstriyel PFC ve invert\u00f6r kademeleri i\u00e7in tipik); belirli MV tasar\u0131mlar\u0131 i\u00e7in daha y\u00fcksek s\u0131n\u0131flar mevcuttur<\/li>\n\n\n\n
- Ak\u0131m de\u011ferleri: Cihaz ba\u015f\u0131na 10\u2013300 A; paralel dostu d\u00fczenlerle daha y\u00fcksek ak\u0131m raylar\u0131n\u0131 kar\u015f\u0131lamak i\u00e7in dizi se\u00e7enekleri<\/li>\n\n\n\n
- Ters kurtarma: Neredeyse s\u0131f\u0131r Qrr, minimum kay\u0131p ve EMI ile y\u00fcksek frekansl\u0131 anahtarlamaya olanak tan\u0131r<\/li>\n\n\n\n
- Ba\u011flant\u0131 kapasitans\u0131: Kararl\u0131 y\u00fcksek dv\/dt \u00e7al\u0131\u015fmas\u0131 i\u00e7in yumu\u015fak kurtarma profiline sahip d\u00fc\u015f\u00fck Cj<\/li>\n\n\n\n
- \u0130leri gerilim (VF): Y\u00fcksek ak\u0131m darbeleri alt\u0131nda minimum iletim kayb\u0131 i\u00e7in s\u0131cakl\u0131\u011fa g\u00f6re optimize edilmi\u015f VF<\/li>\n\n\n\n
- Paketleme ve termal tasar\u0131m<\/li>\n\n\n\n
- Dizi konfig\u00fcrasyonlar\u0131: ortak katot\/ortak anot, \u00e7ift\/d\u00f6rtl\u00fc paketler ve k\u00f6pr\u00fc dizileri<\/li>\n\n\n\n
- Ba\u011flant\u0131lar: D\u00fc\u015f\u00fck end\u00fcktansl\u0131 kur\u015fun \u00e7er\u00e7eveler veya lamine bara uyumlu terminaller; Kelvin alg\u0131lama iste\u011fe ba\u011fl\u0131<\/li>\n\n\n\n
- Alt tabakalar: D\u00f6ng\u00fcsel dayan\u0131m i\u00e7in Si3N4 veya maksimum termal iletkenlik i\u00e7in AlN<\/li>\n\n\n\n
- Kal\u0131p ba\u011flant\u0131s\u0131: \u00dcst\u00fcn termal diren\u00e7 ve d\u00f6ng\u00fcsel dayan\u0131kl\u0131l\u0131k i\u00e7in Ag-sinter<\/li>\n\n\n\n
- G\u00fcvenilirlik ve \u00e7evre<\/li>\n\n\n\n
- \u00c7al\u0131\u015fma ba\u011flant\u0131s\u0131: -40\u00b0C ila +175\u00b0C; de\u011fer d\u00fc\u015f\u00fcrme e\u011frileri sa\u011flan\u0131r<\/li>\n\n\n\n
- Kalifikasyon: End\u00fcstriyel normlara g\u00f6re tan\u0131mlanm\u0131\u015f \u0394Tj ile HTGB\/HTRB, g\u00fc\u00e7 d\u00f6ng\u00fcs\u00fc ve termal \u015fok<\/li>\n\n\n\n
- Sa\u011flaml\u0131k: Sert anahtarlama ve serbest \u00e7al\u0131\u015fma rolleri i\u00e7in y\u00fcksek dalgalanma ak\u0131m\u0131 kapasitesi ve dv\/dt tolerans\u0131<\/li>\n\n\n\n
- Entegrasyon ve kontrol<\/li>\n\n\n\n
- PFC ve invert\u00f6r bacaklar\u0131nda silisyum ultra h\u0131zl\u0131 diyotlara tak ve \u00e7al\u0131\u015ft\u0131r alternatifleri<\/li>\n\n\n\n
- Manyetik boyutlar\u0131 ve kay\u0131plar\u0131 azaltmak i\u00e7in 50\u2013200 kHz'de SiC MOSFET anahtarlamas\u0131yla uyumlu<\/li>\n\n\n\n
- EMI'ye duyarl\u0131 tasar\u0131m, snubber gereksinimlerini ve filtre hacmini azalt\u0131r<\/li>\n<\/ul>\n\n\n\n
End\u00fcstriyel PFC ve Serbest \u00c7al\u0131\u015fma Kademeleri i\u00e7in Performans Kar\u015f\u0131la\u015ft\u0131rmas\u0131<\/h2>\n\n\n\n
Kriter<\/th> SiC Schottky diyot dizileri (50\u2013200 kHz i\u00e7in optimize edilmi\u015ftir)<\/th> Silisyum ultra h\u0131zl\u0131 veya PN diyotlar<\/th><\/tr><\/thead> Ters geri kazan\u0131m \u00fccreti (Qrr)<\/td> Neredeyse s\u0131f\u0131r, minimum anahtarlama kayb\u0131<\/td> Y\u00fcksek Qrr, \u00f6nemli kay\u0131p ve EMI<\/td><\/tr> \u00c7al\u0131\u015fma frekans\u0131<\/td> Y\u00fcksek (50\u2013200 kHz) kararl\u0131 dv\/dt ile<\/td> Kurtarma ve \u0131s\u0131nma ile s\u0131n\u0131rl\u0131d\u0131r<\/td><\/tr> Termal performans<\/td> Daha d\u00fc\u015f\u00fck ba\u011flant\u0131 s\u0131cakl\u0131\u011f\u0131; daha k\u00fc\u00e7\u00fck \u0131s\u0131 emiciler<\/td> Daha s\u0131cak \u00e7al\u0131\u015fma; daha b\u00fcy\u00fck so\u011futma<\/td><\/tr> PFC'de verimlilik etkisi<\/td> Tipik olarak +%0,5\u20131,0 sistem kazanc\u0131<\/td> Daha d\u00fc\u015f\u00fck, daha fazla snubber'a ihtiya\u00e7 duyulur<\/td><\/tr> Y\u00fcksek ortamda g\u00fcvenilirlik<\/td> +175\u00b0C ba\u011flant\u0131da g\u00fc\u00e7l\u00fc<\/td> De\u011fer d\u00fc\u015f\u00fcrme gereklidir; azalt\u0131lm\u0131\u015f \u00f6m\u00fcr<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n Uzman Teklifi ile Temel Avantajlar ve Kan\u0131tlanm\u0131\u015f Faydalar<\/h2>\n\n\n\n
- \n
- Verimlilik art\u0131\u015f\u0131 ve termal bo\u015fluk: Neredeyse s\u0131f\u0131r Qrr, PFC ve invert\u00f6r serbest \u00e7al\u0131\u015fmas\u0131nda anahtarlama kay\u0131plar\u0131n\u0131 azaltarak, genel PCS verimlili\u011fini 'e ve \u00fczerine \u00e7\u0131kar\u0131rken, so\u011futma taleplerini de hafifletir.<\/li>\n\n\n\n
- Kompakt, y\u00fcksek frekansl\u0131 \u00e7al\u0131\u015fma: Alan k\u0131s\u0131tl\u0131 end\u00fcstri parklar\u0131 i\u00e7in kritik \u00f6neme sahip olan daha k\u00fc\u00e7\u00fck ind\u00fckt\u00f6rleri ve LCL filtrelerini etkinle\u015ftiren 50\u2013200 kHz anahtarlamay\u0131 destekler.<\/li>\n\n\n\n
- Zorlu ortamlarda sa\u011flaml\u0131k: Y\u00fcksek ba\u011flant\u0131 s\u0131cakl\u0131\u011f\u0131 kabiliyeti ve Ag-sinter\/Si3N4 veya AlN y\u0131\u011f\u0131nlar\u0131, Sind, Pencap ve Belucistan'daki end\u00fcstri parklar\u0131nda tipik olan tozlu, s\u0131cak tesislerde \u0394Tj yorgunlu\u011funa kar\u015f\u0131 diren\u00e7lidir.<\/li>\n<\/ul>\n\n\n\n
Uzman bak\u0131\u015f a\u00e7\u0131s\u0131:
\u201cSiC Schottky diodes practically eliminate reverse recovery loss, a dominant factor in high-frequency rectification and freewheeling, delivering measurable efficiency and size reductions.\u201d \u2014 IEEE Transactions on Power Electronics, high-frequency rectification studies (https:\/\/ieeexplore.ieee.org)<\/p>\n\n\n\nGer\u00e7ek D\u00fcnya Uygulamalar\u0131 ve \u00d6l\u00e7\u00fclebilir Ba\u015far\u0131 Hikayeleri<\/h2>\n\n\n\n
- \n
- Pencap end\u00fcstri park\u0131nda 100 kW PCS \u00f6n ucu: Silisyum ultra h\u0131zl\u0131 diyotlar\u0131n 1200V SiC Schottky dizileriyle de\u011fi\u015ftirilmesi, PFC kademesi verimlili\u011fini ~%0,8 art\u0131rarak, \u0131s\u0131 emici k\u00fctlesini azaltm\u0131\u015f ve daha k\u00fc\u00e7\u00fck bir kabin ayak izine olanak sa\u011flam\u0131\u015ft\u0131r. Sistem gidi\u015f-d\u00f6n\u00fc\u015f kay\u0131plar\u0131, geri \u00f6deme s\u00fcresini k\u0131saltacak kadar iyile\u015fmi\u015ftir.<\/li>\n\n\n\n
- Sind'deki tekstil fabrikas\u0131 de\u011fi\u015fken h\u0131zl\u0131 s\u00fcr\u00fcc\u00fcleri: SiC serbest \u00e7al\u0131\u015fma dizileri, diyot kurtarma sivri u\u00e7lar\u0131n\u0131 en aza indirerek, EMI ile ilgili ar\u0131zalar\u0131 azaltm\u0131\u015f ve daha y\u00fcksek anahtarlama frekans\u0131na olanak sa\u011flam\u0131\u015ft\u0131r. Sonu\u00e7: Motor terminallerinde daha d\u00fc\u015f\u00fck THD ve yaz s\u0131ca\u011f\u0131nda daha iyi \u00e7al\u0131\u015fma s\u00fcresi.<\/li>\n\n\n\n
- G\u00fcney Pakistan'daki BESS invert\u00f6r\u00fc: SiC dizileri, SiC MOSFET bacaklar\u0131yla birle\u015ftirildi\u011finde, snubber a\u011f\u0131 boyutunu ve LCL filtre hacmini azaltarak, \u2265 sistem verimlili\u011fini ve daha h\u0131zl\u0131 \u015febeke kodu kabul\u00fcn\u00fc desteklemi\u015ftir.<\/li>\n<\/ul>\n\n\n\n
Se\u00e7im ve Bak\u0131mla \u0130lgili Hususlar<\/h2>\n\n\n\n
- \n
- Cihaz se\u00e7imi<\/li>\n\n\n\n
- Gerilim de\u011feri: LV kademeleri i\u00e7in 650V, end\u00fcstriyel PCS'lerin tipik HV DC ba\u011flant\u0131lar\u0131 i\u00e7in 1200V; dalgalanma ve marj dikkate al\u0131narak se\u00e7in.<\/li>\n\n\n\n
- Ak\u0131m ve dizi topolojisi: S\u00fcrekli ve tepe ak\u0131mlar i\u00e7in dizi boyutland\u0131r\u0131n; simetrik d\u00fczenli paralel dizileri d\u00fc\u015f\u00fcn\u00fcn.<\/li>\n\n\n\n
- Termal ve mekanik<\/li>\n\n\n\n
- D\u00f6ng\u00fcsel sa\u011flaml\u0131k i\u00e7in Si3N4 alt tabakalar\u0131 se\u00e7in; tepe \u0131s\u0131 ak\u0131s\u0131n\u0131n s\u0131n\u0131rlay\u0131c\u0131 oldu\u011fu yerlerde AlN se\u00e7in.<\/li>\n\n\n\n
- Termal yolu CFD\/FEA ile do\u011frulay\u0131n; tozlu tesislerde temiz hava ak\u0131\u015f\u0131n\u0131 ve bak\u0131m\u0131 yap\u0131labilir filtre eri\u015fimini koruyun.<\/li>\n\n\n\n
- EMI ve anahtarlama<\/li>\n\n\n\n
- MOSFET kap\u0131 direnci (Rg) ve dv\/dt \u015fekillendirme ile koordinasyon sa\u011flay\u0131n; daha d\u00fc\u015f\u00fck Cj halkalanmay\u0131 azalt\u0131r ancak d\u00fczen parazitlerini do\u011frulay\u0131n.<\/li>\n\n\n\n
- Snubber ihtiya\u00e7lar\u0131n\u0131 yeniden de\u011ferlendirin; genellikle SiC Schottky dizileriyle k\u00fc\u00e7\u00fclt\u00fcl\u00fcr veya ortadan kald\u0131r\u0131l\u0131r.<\/li>\n\n\n\n
- G\u00fcvenilirlik<\/li>\n\n\n\n
- Uygulamaya uygun \u0394Tj ile g\u00fc\u00e7 d\u00f6ng\u00fcs\u00fc ger\u00e7ekle\u015ftirin; anormal olaylar (ak\u0131m giri\u015fi, ar\u0131zalar) i\u00e7in dalgalanma kapasitesini onaylay\u0131n.<\/li>\n\n\n\n
- Y\u00fcksek ortam mevsimlerinde tahmini bak\u0131m i\u00e7in termal sens\u00f6r verilerini kaydedin.<\/li>\n<\/ul>\n\n\n\n
Sekt\u00f6r Ba\u015far\u0131 Fakt\u00f6rleri ve M\u00fc\u015fteri G\u00f6r\u00fc\u015fleri<\/h2>\n\n\n\n
- \n
- Kap\u0131 s\u00fcr\u00fcc\u00fcs\u00fc ve manyetiklerle ortak optimizasyon, EMI'yi azalt\u0131r, filtreleri k\u00fc\u00e7\u00fclt\u00fcr ve MV besleyicilerde uyumlulu\u011fu h\u0131zland\u0131r\u0131r.<\/li>\n\n\n\n
- Parametre paketleri ve devreye alma k\u0131lavuzlar\u0131, yerinde ayarlama s\u00fcresini azalt\u0131r.<\/li>\n<\/ul>\n\n\n\n
M\u00fc\u015fteri geri bildirimi:
\u201cSiC Schottky dizilerine y\u00fckseltme, an\u0131nda bir PFC verimlilik kazanc\u0131 sa\u011flad\u0131 ve so\u011futma k\u00fctlesini azaltmam\u0131z\u0131 sa\u011flad\u0131. Devreye alma, daha az EMI sorunuyla daha sorunsuzdu.\u201d \u2014 M\u00fchendislik y\u00f6neticisi, C&I depolama entegrat\u00f6r\u00fc<\/p>\n\n\n\nGelecekteki Yenilikler ve Pazar E\u011filimleri<\/h2>\n\n\n\n
- \n
- Daha y\u00fcksek ak\u0131ml\u0131, daha d\u00fc\u015f\u00fck kapasitansl\u0131 diziler, daha da y\u00fcksek anahtarlama frekanslar\u0131na ve azalt\u0131lm\u0131\u015f EMI'ye olanak tan\u0131r.<\/li>\n\n\n\n
- Tahmini bak\u0131m ve dijital ikizleri desteklemek i\u00e7in entegre alg\u0131lama (s\u0131cakl\u0131k, ak\u0131m tahmini).<\/li>\n\n\n\n
- Kur\u015fun s\u00fcrelerini k\u0131saltmak ve sat\u0131\u015f sonras\u0131 hizmeti iyile\u015ftirmek i\u00e7in Pakistan'da yerelle\u015ftirilmi\u015f mod\u00fcl paketleme ve test kapasitesi.<\/li>\n<\/ul>\n\n\n\n
S\u0131k Sorulan Sorular ve Uzman Yan\u0131tlar\u0131<\/h2>\n\n\n\n
- \n
- PFC'de SiC Schottky dizilerine ge\u00e7i\u015ften tipik verimlilik kazanc\u0131 nedir?
Saha sonu\u00e7lar\u0131 genellikle sistem d\u00fczeyinde ~%0,5\u20131,0 iyile\u015fme g\u00f6sterir ve \u0131s\u0131 emici boyutunda \u00f6nemli azalmalar olur.<\/li>\n\n\n\n - SiC Schottky dizileri EMI sorunlar\u0131n\u0131 azaltabilir mi?
Evet. Neredeyse s\u0131f\u0131r Qrr ve d\u00fc\u015f\u00fck Cj, ak\u0131m sivri u\u00e7lar\u0131n\u0131 ve halkalanmay\u0131 azalt\u0131r, genellikle daha k\u00fc\u00e7\u00fck snubber'lara ve filtrelere izin verir.<\/li>\n\n\n\n - Diziler paralel \u00e7al\u0131\u015fma i\u00e7in uygun mu?
Evet, simetrik d\u00fczen ve termal denge ile; e\u015fle\u015fen \u00f6zelliklere ve Kelvin se\u00e7eneklerine sahip diziler, ak\u0131m payla\u015f\u0131m\u0131n\u0131 iyile\u015ftirir.<\/li>\n\n\n\n - 45\u201350\u00b0C ortamda nas\u0131l performans g\u00f6sterirler?
Y\u00fcksek ba\u011flant\u0131 s\u0131cakl\u0131\u011f\u0131 kabiliyeti ve Ag-sinter\/seramik alt tabakalar g\u00fcvenilirli\u011fi korur; yeterli de\u011fer d\u00fc\u015f\u00fcrme ve filtre bak\u0131m\u0131 sa\u011flay\u0131n.<\/li>\n\n\n\n - En \u00e7ok hangi uygulamalar fayda sa\u011flar?
PCS'lerde \u00f6n u\u00e7 PFC, end\u00fcstriyel s\u00fcr\u00fcc\u00fcler i\u00e7in invert\u00f6r bacaklar\u0131nda serbest \u00e7al\u0131\u015fma, enerji depolama d\u00f6n\u00fc\u015ft\u00fcr\u00fcc\u00fclerinde y\u00fckseltme ve ara ba\u011flant\u0131l\u0131 DC\/DC kademeleri.<\/li>\n<\/ul>\n\n\n\nBu \u00c7\u00f6z\u00fcm Operasyonlar\u0131n\u0131z \u0130\u00e7in Neden \u0130\u015fe Yar\u0131yor?<\/h2>\n\n\n\n
SiC Schottky diyot dizileri, Pakistan'\u0131n end\u00fcstrilerinin en \u00e7ok ihtiya\u00e7 duydu\u011fu yerlerde an\u0131nda, \u00f6l\u00e7\u00fclebilir kazan\u00e7lar sa\u011flar: \u00f6n u\u00e7 PFC verimlili\u011fi, invert\u00f6r serbest \u00e7al\u0131\u015fma kayb\u0131 azaltma, daha k\u00fc\u00e7\u00fck termal ve filtre donan\u0131m\u0131 ve s\u0131cak, tozlu ko\u015fullarda sa\u011flam performans. Neredeyse s\u0131f\u0131r Qrr ve d\u00fc\u015f\u00fck Cj \u00f6zellikleri, SiC MOSFET anahtarlar\u0131n\u0131 tamamlayarak, PCS verimlili\u011fini \u2265'e \u00e7\u0131kar\u0131r ve geli\u015fen \u015febeke ve tesis gereksinimlerini kar\u015f\u0131layan kompakt, g\u00fcvenilir tasar\u0131mlara olanak tan\u0131r.<\/p>\n\n\n\n
\u00d6zel \u00c7\u00f6z\u00fcmler i\u00e7in Uzmanlarla Ba\u011flant\u0131 Kurun<\/h2>\n\n\n\n
U\u00e7tan uca SiC yetene\u011fi sunan bir ortakla verimlilik yol haritan\u0131z\u0131 h\u0131zland\u0131r\u0131n:<\/p>\n\n\n\n
- \n
- 10+ y\u0131ll\u0131k SiC \u00fcretim uzmanl\u0131\u011f\u0131<\/li>\n\n\n\n
- Cihaz ve paketleme inovasyonu i\u00e7in \u00c7in Bilimler Akademisi deste\u011fi<\/li>\n\n\n\n
- Termal ve yap\u0131sal optimizasyon i\u00e7in R-SiC, SSiC, RBSiC ve SiSiC genelinde \u00f6zel \u00fcr\u00fcn geli\u015ftirme<\/li>\n\n\n\n
- Yerelle\u015ftirilmi\u015f paketleme ve test i\u00e7in teknoloji transferi ve fabrika kurulum hizmetleri<\/li>\n\n\n\n
- Malzemelerden ve epitaksiden dizilere, mod\u00fcllere, kontrollere ve uyumlulu\u011fa kadar anahtar teslim \u00e7\u00f6z\u00fcmler<\/li>\n\n\n\n
- Daha y\u00fcksek verimlilik, azalt\u0131lm\u0131\u015f ayak izi ve daha h\u0131zl\u0131 devreye alma sa\u011flayan 19'dan fazla kurulu\u015fla kan\u0131tlanm\u0131\u015f sonu\u00e7lar<\/li>\n<\/ul>\n\n\n\n
\u00dccretsiz bir dan\u0131\u015fma ve \u00f6zel diyot dizisi se\u00e7imi, termal tasar\u0131m ve EMI optimizasyon plan\u0131 talep edin:<\/p>\n\n\n\n
- \n
- E-posta: team@sicarbtech.com<\/li>\n\n\n\n
- Telefon\/WhatsApp: +86 133 6536 0038<\/li>\n<\/ul>\n\n\n\n
PCS ve end\u00fcstriyel s\u00fcr\u00fcc\u00fc y\u00fckseltmelerinde projeleri riske atmak, \u015febeke kabul\u00fcn\u00fc h\u0131zland\u0131rmak<\/p>\n\n\n\n
Makale Meta Verileri<\/h2>\n\n\n\n
Son g\u00fcncelleme: 2025-09-10
Bir sonraki planl\u0131 g\u00fcncelleme: 2026-01-15<\/p>","protected":false},"excerpt":{"rendered":"\u00dcr\u00fcnlere Genel Bak\u0131\u015f ve 2025 Pazar \u0130lgisi Silisyum karb\u00fcr (SiC) Schottky diyot dizileri, end\u00fcstriyel s\u00fcr\u00fcc\u00fcler ve pil enerji depolama sistemi (BESS) g\u00fc\u00e7 d\u00f6n\u00fc\u015ft\u00fcrme sistemleri (PCS) genelinde g\u00fc\u00e7 fakt\u00f6r\u00fc d\u00fczeltmesi (PFC), DC\/DC kademeleri ve invert\u00f6r bacaklar\u0131nda ultra h\u0131zl\u0131, d\u00fc\u015f\u00fck kay\u0131pl\u0131 do\u011frultma ve serbest d\u00f6nme i\u00e7in tasarlanm\u0131\u015ft\u0131r. Silisyum ultra h\u0131zl\u0131 veya SiC PN ba\u011flant\u0131 diyotlar\u0131ndan farkl\u0131 olarak, SiC Schottky yap\u0131lar\u0131…<\/p>","protected":false},"author":3,"featured_media":2333,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_gspb_post_css":"","_kad_blocks_custom_css":"","_kad_blocks_head_custom_js":"","_kad_blocks_body_custom_js":"","_kad_blocks_footer_custom_js":"","_kad_post_transparent":"","_kad_post_title":"","_kad_post_layout":"","_kad_post_sidebar_id":"","_kad_post_content_style":"","_kad_post_vertical_padding":"","_kad_post_feature":"","_kad_post_feature_position":"","_kad_post_header":false,"_kad_post_footer":false,"_kad_post_classname":"","footnotes":""},"categories":[1],"tags":[],"class_list":["post-5270","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-uncategorized"],"acf":{"en_gb-title":"","en_gb-meta":"","ja-title":"","ja-meta":"","ja-content":"","ko-title":"","ko-meta":"","ko-content":"","nl-title":"","nl-meta":"","nl-content":"","es-title":"","es-meta":"","es-content":"","ru-title":"","ru-meta":"","ru-content":"","tr-title":"","tr-meta":"","tr-content":"","pl-title":"","pl-meta":"","pl-content":"","pt-title":"","pt-meta":"","pt-content":"","de-title":"","de-meta":"","de-content":"","fr-title":"","fr-meta":"","fr-content":""},"taxonomy_info":{"category":[{"value":1,"label":"Uncategorized"}]},"featured_image_src_large":["https:\/\/sicarbtech.com\/wp-content\/uploads\/2025\/05\/Custom-Silicon-Carbide-Products-22_1-1.jpg",1024,1024,false],"author_info":{"display_name":"yiyunyinglucky","author_link":"https:\/\/sicarbtech.com\/tr\/author\/yiyunyinglucky\/"},"comment_info":0,"category_info":[{"term_id":1,"name":"Uncategorized","slug":"uncategorized","term_group":0,"term_taxonomy_id":1,"taxonomy":"category","description":"","parent":0,"count":795,"filter":"raw","cat_ID":1,"category_count":795,"category_description":"","cat_name":"Uncategorized","category_nicename":"uncategorized","category_parent":0}],"tag_info":false,"_links":{"self":[{"href":"https:\/\/sicarbtech.com\/tr\/wp-json\/wp\/v2\/posts\/5270","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/sicarbtech.com\/tr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/sicarbtech.com\/tr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/sicarbtech.com\/tr\/wp-json\/wp\/v2\/users\/3"}],"replies":[{"embeddable":true,"href":"https:\/\/sicarbtech.com\/tr\/wp-json\/wp\/v2\/comments?post=5270"}],"version-history":[{"count":2,"href":"https:\/\/sicarbtech.com\/tr\/wp-json\/wp\/v2\/posts\/5270\/revisions"}],"predecessor-version":[{"id":5340,"href":"https:\/\/sicarbtech.com\/tr\/wp-json\/wp\/v2\/posts\/5270\/revisions\/5340"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/sicarbtech.com\/tr\/wp-json\/wp\/v2\/media\/2333"}],"wp:attachment":[{"href":"https:\/\/sicarbtech.com\/tr\/wp-json\/wp\/v2\/media?parent=5270"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/sicarbtech.com\/tr\/wp-json\/wp\/v2\/categories?post=5270"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/sicarbtech.com\/tr\/wp-json\/wp\/v2\/tags?post=5270"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
- PFC'de SiC Schottky dizilerine ge\u00e7i\u015ften tipik verimlilik kazanc\u0131 nedir?