Product Overview and 2025 Market Relevance Silicon carbide (SiC) crystal growth and epitaxy equipment purpose-built for 4H-SiC enable end-to-end production of substrates and epitaxial layers that power next-generation high-voltage rectifier modules, MOSFETs, and Schottky diodes. For Pakistan’s textile, cement, steel, and emerging industrial sectors, localized access to high-quality 4H-SiC wafers and epi layers accelerates deployment … Continue reading Silicon Carbide Crystal Growth and Epitaxy Equipment for 4H-SiC Wafer and Epi Layer Production