Product Overview and 2025 Market Relevance Large-diameter silicon carbide (SiC) epitaxial wafers—engineered with custom doping profiles and low-defect-density substrates—are the foundation for high-performance 1200V–3300V devices used in battery energy storage system (BESS) power conversion systems (PCS), MV inverters, and industrial drives. For Pakistan’s textile, cement, steel, and emerging industrial sectors, where grid volatility on 11–33 … Continue reading Large-Diameter Silicon Carbide Epitaxial Wafers with Custom Doping Profiles for 1200V–3300V Device Fabrication and Low-Defect Density