Custom Silicon Carbide Epitaxial Wafers with Thickness/Doping Profiles for High-Voltage, Low-Defect Devices

Product Overview and 2025 Market Relevance Custom silicon carbide (SiC) epitaxial wafers are the foundation for high-voltage, low-loss, and highly reliable power devices used in 11–33 kV grid-tied photovoltaic inverters and industrial drives across Pakistan’s textile, cement, and steel sectors. Tailored epitaxial thickness, doping concentration, and profile engineering (e.g., uniform, graded, or superjunction-like compensation structures) … Continue reading Custom Silicon Carbide Epitaxial Wafers with Thickness/Doping Profiles for High-Voltage, Low-Defect Devices