Wafer‑Level Ion Implantation and Rapid Thermal Annealing Equipment for Low‑Defect Silicon Carbide Dies

On a hot afternoon in Lahore’s industrial zone, a 150 kW string inverter quietly meets its output while the grid flickers and the inlet air hovers near 50°C. The reason it behaves like clockwork lies far upstream—inside the materials line where its devices were born. Wafer‑Level Ion Implantation and Rapid Thermal Annealing Equipment for Low‑Defect … Continue reading Wafer‑Level Ion Implantation and Rapid Thermal Annealing Equipment for Low‑Defect Silicon Carbide Dies