Silicon Carbide Crystal Growth and Epitaxy Equipment for 4H‑SiC Wafer and Epi Layer Production

2025 Product Overview and Market Relevance for Pakistan 4H‑SiC crystal growth and epitaxy equipment sit at the foundation of the silicon carbide value chain, enabling local production of substrates and drift layers for high-voltage MOSFETs, Schottky diodes, and power modules used in UPS, VFDs, and grid-tied converters. For Pakistan’s textile, cement, and steel sectors—and the … Continue reading Silicon Carbide Crystal Growth and Epitaxy Equipment for 4H‑SiC Wafer and Epi Layer Production