Product Overview and 2025 Market Relevance High-thermal-conductivity ceramic substrates based on silicon carbide—reaction-bonded (R-SiC), sintered (SSiC), recrystallized/porous-infiltrated (RBSiC), and silicon-infiltrated silicon carbide (SiSiC)—are foundational to reliable packaging of silicon carbide (SiC) power devices in Pakistan’s textile, cement, steel, and emerging industrial sectors. These substrate families deliver superior heat spreading, mechanical rigidity, and environmental resilience, enabling … Continue reading High-Thermal-Conductivity Ceramic Substrates (R-SiC/SSiC/RBSiC/SiSiC) for Power Electronics Packaging